To make this website work, we log user data. By using Shephard's online services, you agree to our Privacy Policy, including cookie policy.

Open menu Search

GE to develop SiC-based power electronics

10th March 2017 - 15:30 GMT | by The Shephard News Team


GE Aviation will work on developing silicon carbide-based power electronics to support high-voltage next generation ground vehicle electrical power architecture under a contract announced on 8 March.

The $4.1 million contract from the US Army will see the company deliver three hardware components that will demonstrate the benefits of its silicon carbide MOSFET technology in a 200kW starter generator controller.

The integrated starter generator controller (ISGC) will provide sensored and sensorless control for multiple generator types in a single line replaceable unit weighing less than 50lbs. It will operate at 125°C ambient in bi-directional operation for engine start. The ISGC will utilize 105°C coolant and will be CANbus programmable. The prototype will be demonstrated in 2018.

The work will support the US Army's Tank Automotive Research, Development and Engineering Center next generation vehicle electrical power architecture leap-ahead technology development.

Vic Bonneau, president of Electrical Power Systems for GE Aviation, said: 'We continue to invest in silicon carbide and high density packaging to help the US Army to better manage on-board power. This component provides the additional benefit of eliminating the need for an electronic cooling system.

'Our similar silicon carbide based programmes and planned re-use have led to this new critical high temperature application.'

The Shephard News Team


The Shephard News Team

As part of our promise to deliver comprehensive coverage to Premium News and Defence Insight …

Read full bio

Share to